Self-ordering of CoSi2 precipitates and epitaxial layer growth of CoSi2 on Si(100)

被引：2

作者：

Mantl, S ^{[1
]}

Hacke, M ^{[1
]}

Bay, HL ^{[1
]}

Kappius, L ^{[1
]}

Mesters, S ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany

来源：

THIN SOLID FILMS | 1998年 / 321卷

关键词：

self-ordering; molecular beam epitaxy; epitaxial silicides;

D O I：

10.1016/S0040-6090(98)00482-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we present recent investigations on the growth of buried single crystalline CoSi2 layers in Si(100) by molecular beam allotaxy. By this growth method the layer formation takes place during a rapid high temperature anneal of silicide precipitates embedded in the Si(100) matrix. During the anneal the precipitates coarsen and coalesce into a uniform layer. The results show that, under certain conditions, self-ordering of the precipitates evolves during the anneal in accordance with recent computer simulation. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：251 / 255

页数：5

共 18 条

[1] ALLOTAXIAL GROWTH OF SINGLE-CRYSTAL SI/COSI2/SI(100) HETEROSTRUCTURES
BAY, HL
MANTL, S
MICHEL, I
[J]. APPLIED SURFACE SCIENCE, 1993, 65-6 : 697 - 703
[2] PRECIPITATE COARSENING AND CO REDISTRIBUTION AFTER ION-IMPLANTATION IN SILICON
FICHTNER, PFP
JAGER, W
RADERMACHER, K
MANTL, S
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 632 - 636
[3] ION-BEAM SYNTHESIS OF EPITAXIAL SILICIDES - FABRICATION, CHARACTERIZATION AND APPLICATIONS
MANTL, S
[J]. MATERIALS SCIENCE REPORTS, 1992, 8 (1-2): : 1 - 95
[4] NEW METHOD FOR EPITAXIAL HETEROSTRUCTURE LAYER GROWTH
MANTL, S
BAY, HL
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (03) : 267 - 269
[5] MANTL S, 1992, MATER RES SOC SYMP P, V263, P221, DOI 10.1557/PROC-263-221
[6] Maximov L. A., 1996, Journal of Experimental and Theoretical Physics, V83, P199
[7] LOW-TEMPERATURE FORMATION OF SI/SILICIDE/SI DOUBLE HETEROSTRUCTURES BY SELF-ALIGNED MBE GROWTH
OHSIMA, T
NAKAMURA, N
NAKAGAWA, K
MIYAO, M
[J]. THIN SOLID FILMS, 1990, 184 : 275 - 282
[8] Ostwald W, 1900, Z PHYS CHEM-STOCH VE, V34, P495
[9] OSTWALD RIPENING DURING ION-BEAM SYNTHESIS - A COMPUTER-SIMULATION FOR INHOMOGENEOUS SYSTEMS
REISS, S
HEINIG, KH
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 84 (02) : 229 - 233
[10] COMPUTER-SIMULATION OF MECHANISMS OF THE SIMOX PROCESS
REISS, S
HEINIG, KH
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 102 (1-4) : 256 - 260

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