Electrical modification in Cu(In,Ga)Se2 thin films by chemical bath deposition process of CdS films -: art. no. 053701

被引：21

作者：

Jiang, CS ^{[1
]}

Noufi, R ^{[1
]}

Ramanathan, K ^{[1
]}

Moutinho, HR ^{[1
]}

Al-Jassim, MM ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 05期

关键词：

D O I：

10.1063/1.1856217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the two-dimensional electrical potential distribution on the surface of photovoltaic Cu(In,Ga)Se-2 (CIGS) thin films using the nanoscale electrical characterization of scanning Kelvin probe microscopy. The potential peak on the grain boundaries becomes sharper after the sample is rinsed in high-purity water, and the height of the potential peak becomes smaller after chemical treatments in a solution similar to that used in the chemical bath deposition of CdS films. This demonstrates an effect of surface Na removal by the water rinsing and downward band bending on the CIGS film surface induced by the chemical treatment. This electrical modification is expected to benefit the properties of the electrical junction and, hence, CIGS/CdS device performance. (C) 2005 American Institute of Physics.

引用

页数：6

共 18 条

[1] Optimization of CBD CdS process in high-efficiency Cu(In,Ga)Se2-based solar cells [J].