ITO and ITO/CeO2 films with various CeO2 buffer layer thickness were deposited on flexible polyimide substrates by DC and RF magnetron bi-sputtering at 200 degrees C. The crystallinity of the ITO/CeO2 films increased remarkably with increasing CeO2 thickness from 0 to 7 nm and the ITO/CeO2 films showed a single (2 2 2)-oriented highly preferred structure. The resistivity of the ITO/ CeO2 films decreased with increasing CeO2 buffer layer thickness due to the increase in crystallinity. The minimum resistivity of the ITO/ CeO2 film, 7 nm in thickness, was 2.84 x 10(-4) Omega cm. A relatively small change in resistance in dynamic stress mode was observed for the ITO/ CeO2 film with a buffer layer thickness of 3 nm. (C) 2010 Elsevier B. V. All rights reserved.
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Univ Kebangsaan Malaysia, Fac Sci & Technol, Sch Appl Phys, UKM Bangi 43600, Selangor, MalaysiaUniv Kebangsaan Malaysia, Fac Sci & Technol, Sch Appl Phys, UKM Bangi 43600, Selangor, Malaysia
Yap, C. C.
Yahaya, M.
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Univ Kebangsaan Malaysia, Fac Sci & Technol, Sch Appl Phys, UKM Bangi 43600, Selangor, MalaysiaUniv Kebangsaan Malaysia, Fac Sci & Technol, Sch Appl Phys, UKM Bangi 43600, Selangor, Malaysia
Yahaya, M.
Salleh, M. M.
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Univ Kebangsaan Malaysia, IMEN, UKM Bangi 43600, Selangor, MalaysiaUniv Kebangsaan Malaysia, Fac Sci & Technol, Sch Appl Phys, UKM Bangi 43600, Selangor, Malaysia
机构:
Univ Kebangsaan Malaysia, Fac Sci & Technol, Sch Appl Phys, UKM Bangi 43600, Selangor, MalaysiaUniv Kebangsaan Malaysia, Fac Sci & Technol, Sch Appl Phys, UKM Bangi 43600, Selangor, Malaysia
Yap, C. C.
Yahaya, M.
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Univ Kebangsaan Malaysia, Fac Sci & Technol, Sch Appl Phys, UKM Bangi 43600, Selangor, MalaysiaUniv Kebangsaan Malaysia, Fac Sci & Technol, Sch Appl Phys, UKM Bangi 43600, Selangor, Malaysia
Yahaya, M.
Salleh, M. M.
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Univ Kebangsaan Malaysia, IMEN, UKM Bangi 43600, Selangor, MalaysiaUniv Kebangsaan Malaysia, Fac Sci & Technol, Sch Appl Phys, UKM Bangi 43600, Selangor, Malaysia