Inverted InP quantum dot light-emitting diodes using low-temperature solution-processed metal-oxide as an electron transport

被引：18

作者：

Jang, Ilwan ^{[1
,2
]}

Kim, Jiwan ^{[2
]}

Ippen, Christian ^{[3
]}

Greco, Tonino ^{[3
]}

Oh, Min Suk ^{[2
]}

Lee, Jeongno ^{[2
]}

Kim, Won Keun ^{[2
]}

Wedel, Armin ^{[3
]}

Han, Chul Jong ^{[2
]}

Park, Sung Kyu ^{[1
]}

机构：

[1] Chung Ang Univ, Dept Elect & Elect Engn, Seoul 156756, South Korea

[2] Korea Elect Technol Inst, Display Convergence Res Ctr, Seongnam 463816, Gyeonggi, South Korea

[3] Fraunhofer Inst Appl Polymer Res, D-14476 Potsdam, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 02期

关键词：

FILMS; ELECTROLUMINESCENCE; NANOCRYSTALS; TRANSPARENT; EFFICIENCY;

D O I：

10.7567/JJAP.54.02BC01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The present work shows the inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO3/Al, a sol gel derived ZnO film was used as an electron transport layer (ETL) and MoO3 was used as a hole injection layer (HIL). In contrary to high annealing temperature (>200 degrees C) for conventional ZnO films, low temperature annealing (similar to 150 degrees C) was perforrned for sol gel derived ZnO film. The performance of the inverted QD-LEDs was efficiently improved by optimization of the annealing time and temperature of ZnO ETL. The current efficiency was significantly improved about 215% by lowering annealing temperature of ZnO ETL. (C) 2015 The Japan Society of Applied Physics

引用

页数：5

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