A comparative study of CMOS circuit design styles for low-power high-speed VLSI circuits

被引:10
作者
Bisdounis, L [1 ]
Gouvetas, D [1 ]
Koufopavlou, O [1 ]
机构
[1] Univ Patras, Dept Elect & Comp Engn, VLSI Design Lab, Patras 26500, Greece
关键词
D O I
10.1080/002072198134454
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An important issue in the design of VLSI circuits is the choice of the basic circuit approach and topology for implementing various logic and arithmetic functions. In this paper, several static and dynamic CMOS circuit design styles are evaluated in terms of area, propagation delay and power dissipation. The different design styles are compared by performing detailed transistor-level simulations on a benchmark circuit using HSPICE, and analysing the results in a statistical way. Based on the results of our analysis, some of the trade-offs that are possible during the design phase in order to improve the circuit power-delay product are identified.
引用
收藏
页码:599 / 613
页数:15
相关论文
共 24 条
[1]  
[Anonymous], PROBABILITY STAT ENG
[2]  
BELLAOUAR A, 1995, LOW POWER DIGITAL VL
[3]  
BISDOUNIS L, 1996, P IEEE INT S LOW POW, P189
[4]  
Burch R., 1993, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, V1, P63, DOI 10.1109/92.219908
[5]  
CHANDRAKASAN A, 1995, LOW POWER DIGITAL DE
[6]   DESIGN PROCEDURES FOR DIFFERENTIAL CASCODE VOLTAGE SWITCH CIRCUITS [J].
CHU, KM ;
PULFREY, DI .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (06) :1082-1087
[7]   ESTIMATION OF POWER DISSIPATION IN CMOS COMBINATIONAL-CIRCUITS USING BOOLEAN FUNCTION MANIPULATION [J].
DEVADAS, S ;
KEUTZER, K ;
WHITE, J .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1992, 11 (03) :373-383
[8]  
HELLER LG, 1984, P IEEE INT SOL STAT, P16
[9]   ACCURATE SIMULATION OF POWER DISSIPATION IN VLSI CIRCUITS [J].
KANG, SM .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (05) :889-891
[10]   HIGH-SPEED COMPACT CIRCUITS WITH CMOS [J].
KRAMBECK, RH ;
LEE, CM ;
LAW, HFS .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (03) :614-619