Mechanism initiated by nanoabsorber for UV nanosecond-pulse-driven damage of dielectric coatings

被引：23
作者：
Wei, Chaoyang [1 ]
Shao, Jianda [1 ]
He, Hongbo [1 ]
Yi, Kui [1 ]
Fan, Zhengxiu [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, R&D Ctr Opt Thin Film Coatings, Shanghai 201800, Peoples R China
来源：
OPTICS EXPRESS | 2008年 / 16卷 / 05期
关键词：
D O I：
10.1364/OE.16.003376
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A model of plasma formation induced by UV nanosecond pulselaser interaction with SiO2 thin film based on nanoabsorber is proposed. The model considers the temperature dependence of band gap. The numerical results show that during the process of nanosecond pulsed-laser interaction with SiO2 thin film, foreign inclusion which absorbs a fraction of incident radiation heats the surrounding host material through heat conduction causing the decrease of the band gap and consequently, the transformation of the initial transparent matrix into an absorptive medium around the inclusion, thus facilitates optical damage. Qualitative comparison with experiments is also provided. (C) 2008 Optical Society of America.
引用
收藏
页码：3376 / 3382
页数：7
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