Design and test of pixel sensors for the CMS experiment

被引:9
作者
Bolla, G
Bortoletto, D [1 ]
Rott, C
Roy, A
Kwan, S
Chien, CY
Cho, H
Gobbi, B
Horisberger, R
Kaufmann, R
机构
[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
[2] Fermi Natl Accelerator Lab, Batavia, IL 60510 USA
[3] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60201 USA
[4] Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA
[5] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
[6] Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland
关键词
pixel detectors; LHC;
D O I
10.1016/S0168-9002(00)01201-8
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC) will have a silicon pixel detector as its innermost tracking device. The pixel system will be exposed to the harsh radiation environment of the LHC. Prototype sensors have been designed to meet the specifications of the CMS experiment. The sensors are n(+)-n devices to allow partial depletion operation after bulk type inversion. The isolation of the n(+) pixels is provided through a novel double open p-ring design that allows sensors testing before bump bonding and flip chipping. The prototype wafers contain a variety of p-stop designs and are fabricated by two vendors on different bulk substrates including oxygenated silicon. A study of the static measurement of the prototype sensors before irradiation is presented. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:182 / 184
页数:3
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*CMS COLL, CERNLHCC986 CMS COLL
[2]  
HUGGIN F, 2000, NUCL INSTRUM METH A, V439, P4529