Photoelectric properties of PbSe/BaF2/CaF2 films on Si(111)

被引：0

作者：

Jin, JS ^{[1
]}

Wu, HZ ^{[1
]}

Chang, Y ^{[1
]}

Shou, X ^{[1
]}

Fang, XM ^{[1
]}

McCann, PJ ^{[1
]}

机构：

[1] Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2001年 / 20卷 / 02期

关键词：

PbSe films; BaF2/CaF2; buffer; Schottky diode; current-voltage characteristics;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

PbSe films were grown on Si(111) by incorporation of BaF2/CaF2 buffers using molecular beam epitaxy. The measurements of both scanning electronic microscopy and high-resolution X-ray diffraction showed high crystalline quality of the PbSe films. The surface of PbSe was mirror-like and no cracks were observed. The full width at half-maximum of PbSe diffraction peak was only 153 arcsec. The epitaxial PbSe films were used to fabricate photodiodes. For the first time, metallic aluminum was used to form Al-PbSe Schottky diodes, which demonstrated better and more stable current-voltage characteristics than that obtained from Pb-PbSe Schottky diodes.

引用

页码：154 / 156

页数：3

共 7 条

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