Fabrication of back-illuminated, fully depleted charge-coupled devices

被引：23

作者：

Holland, S. E. ^{[1
]}

Dawson, K. S. ^{[1
]}

Palalo, N. P. ^{[1
]}

Saha, J. ^{[1
]}

Roe, N. A. ^{[1
]}

Wang, G. ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2007年 / 579卷 / 02期

关键词：

charge-coupled device; fully depleted; high-resistivity silicon; back illuminated; fabrication techniques;

D O I：

10.1016/j.nima.2007.05.265

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We describe a fabrication strategy to produce fully depleted, back-illuminated charge-coupled devices (CCDs). Wafers are partially processed at a commercial foundry using standard processing techniques. The wafers are then thinned to the final desired thickness, and the processing steps necessary to produce back-illuminated devices are performed in our laboratory. The CCDs are then probed at wafer level, and we describe our techniques to screen for gate insulator flaws as well as defects on the back side of the wafer that are important for fully depleted devices. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：653 / 657

页数：5

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