Electrical Characterization of Schottky Diodes Based on Inkjet-Printed TiO2 Films

被引：10

作者：

Martinez-Lopez, A. G. ^{[1
]}

Padron-Hernandez, W. Y. ^{[2
]}

Pourjafari, D. ^{[2
]}

Oskam, G. ^{[2
]}

Rodriguez-Gattorno, G. ^{[2
]}

Estrada, M. ^{[3
]}

Tinoco, J. C. ^{[1
]}

机构：

[1] Univ Veracruzana, Micro & Nanotechnol Res Ctr, Xalapa 94294, Veracruz, Mexico

[2] CINVESTAV IPN, Appl Phys Dept, Merida 97310, Mexico

[3] CINVESTAV IPN, Solid State Elect Sect, Mexico City 07360, Mexico

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 12期

关键词：

Crystalline phases TiO2; inkjet printing; Schottky diodes;

D O I：

10.1109/LED.2018.2874380

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TiO2 films have been used for novel sensor devices, thanks to their optical and chemical properties. The development of those applications often requires the features of rectifier devices. In this scenario, TiO2-based Schottky diodes become an interesting alternative. In this letter, a detailed electrical characterization of TiO2-based Schottky diodes is performed. Thin films of the three crystalline phases have been obtained by the inkjet printing technique at room temperature. Thermionic and Poole-Frenkel emission are identified as the main conduction mechanisms in these devices, and the barrier heights are reported for each crystal phase.

引用

页码：1940 / 1943

页数：4

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