Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping

被引：13

作者：

Kokubo, Nobuhiko ^{[1
,2
]}

Tsunooka, Yosuke ^{[1
,2
]}

Fujie, Fumihiro ^{[1
]}

Ohara, Junji ^{[3
]}

Onda, Shoichi ^{[3
]}

Yamada, Hisashi ^{[2
]}

Shimizu, Mitsuaki ^{[2
]}

Harada, Shunta ^{[1
,3
]}

Tagawa, Miho ^{[1
,3
]}

Ujihara, Toru ^{[1
,2
,3
]}

机构：

[1] Nagoya Univ, Dept Mat Sci & Engn, Nagoya, Aichi 4648603, Japan

[2] Natl Inst Ind Sci & Technol AIST, GaN Adv Device Open Innovat Lab GaN OIL, Nagoya, Aichi 4648601, Japan

[3] Nagoya Univ, Inst Mat & Syst Sustainabil IMaSS, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 11期

关键词：

ATOMIC-FORCE MICROSCOPY; ELECTRICAL-PROPERTIES; GALLIUM NITRIDE; ALPHA-GAN; HVPE; CATHODOLUMINESCENCE;

D O I：

10.7567/APEX.11.111001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The threading edge dislocations in a GaN crystal are analyzed via micro-Raman spectroscopy mapping. A clear contrast image of the E-2(H) peak shift from a higher wavenumber to a lower wavenumber is simulated. The direction from the higher-wavenumber region to the lower-wavenumber region is found to be in the 90 degrees rotation from the Burgers vector. The Burgers vector is experimentally determined to be a/3[11 (2) over bar0] using transmission electron microscopy. The magnitude of the Burgers vector agrees well between the simulated and experimental results. Thus, the density, direction, and magnitude of the edge component of the threading dislocations are identified using Raman spectroscopy mapping. (c) 2018 The Japan Society of Applied Physics

引用

页数：4

共 28 条

[1] Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics [J].