Warpage Characteristics of Wafer-Level Package of MEMS with Glass Frit Bonding

被引:0
作者
Xu, Gaowei [1 ]
Wang, Shuangfu [1 ]
Zhu, Chunsheng [1 ]
Ye, Jiaotuo [1 ]
Gai, Wei [1 ]
Luo, Le [1 ]
机构
[1] Chinese Acad Sci, State Key Lab Transducer Technol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
来源
2013 14TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2013年
关键词
warpage; wafer level package(WLP); finite element method(FEM); micro Electro mechanical systems(MEMS); multi-beam optical sensor (MOS);
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Warpage is one of the challenging problems for wafer level package (WLP). Especially, the bonding process of multiple wafers will bring additional stress to WLP and warpage of WLP. This paper aims at the stress and warpage characteristics of the WLP (consisting of silicon cover wafer and silicon MEMS wafer) with glass frit bonding. The finite element (FE) method and MOS (Multi-beam Optical Sensor) technology were used. Simulation result indicated that WLP presents almost zero warpage. MOS measurement result indicated that WLP actually presents convex warpage instead of zero warpage. It turned out that the convex warpage results from the temperature difference between WLP wafers (i.e. cover wafer and MEMS wafers) in the course of post-bond cooling. Taken the temperature difference into account, the simulation result was consistent with experiment results. Furthermore, on the basis of the convex warpage value the stress of WLP was also calculated so as to understand the stress distribution and estimate the reliability level of the MEMS device.
引用
收藏
页码:883 / 887
页数:5
相关论文
共 10 条
[1]   Development of Wafer-Level Warpage and Stress Modeling Methodology and Its Application in Process Optimization for TSV Wafers [J].
Che, Faxing ;
Li, Hongyu Y. ;
Zhang, Xiaowu ;
Gao, Shan ;
Teo, Kenghwa H. .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2012, 2 (06) :944-955
[2]   Warpage and mechanical strength studies of ultra thin 150mm wafers. [J].
Grief, MK ;
Steele, JA .
NINETEENTH IEEE/CPMT INTERNATIONAL ELECTRONICS MANUFACTURING TECHNOLOGY SYMPOSIUM - PROCEEDINGS, 1996 IEMT SYMPOSIUM, 1996, :190-194
[3]   Parametric Design Study for Minimized Warpage of WL-CSP [J].
Hong, Jupyo ;
Gao, Shan ;
Park, Seoungwook ;
Moon, SeonHee ;
Baek, Jonghwan ;
Choi, Seogmoon ;
Yi, Sung .
ESTC 2008: 2ND ELECTRONICS SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2008, :187-191
[4]   Wafer deposition/metallization and back grind, process-induced warpage simulation [J].
Irving, S ;
Liu, Y .
53RD ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, 2003 PROCEEDINGS, 2003, :1459-1462
[5]  
Kurkowski Piotr, 2005, IEEE SEMI ADV SEM MA
[6]  
Lim Ji-hyuk, 2007, IEEE INT EL MAN TECH, P298
[7]   Prediction of back-end process-induced wafer warpage and experimental verification [J].
van Silfhout, RBR ;
van Driel, WD ;
Li, Y ;
Zhang, GQ ;
Ernst, LJ .
52ND ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, 2002 PROCEEDINGS, 2002, :1182-1187
[8]   Warpage and Reliability of a 3D-MCM on an Embedded Substrate With Multiple Interconnection Method [J].
Xu, Gaowei ;
Geng, Fei ;
Huang, Qiuping ;
Luo, Le ;
Zhou, Jian .
IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2010, 33 (03) :571-581
[9]   Four-laser bending beam measurements and FEM modeling of underfill induced wafer warpage [J].
Zhang, ZQ ;
Fan, LH ;
Sitaraman, SK ;
Wong, CP .
54TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2004, :747-753
[10]  
Zhu CS, 2012, 2012 13TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2012), P660