Improved device performance based on crosslinking of poly (3-hexylthiophene)

被引：0
作者：
Gaur, Manoj [1 ]
Lohani, Jaya [2 ]
Raman, R. [2 ]
Balakrishnan, V. R. [2 ]
Raghunathan, P. [3 ]
Eswaran, S. V. [1 ]
机构：
[1] Univ Delhi, St Stephens Coll, Delhi 110007, India
[2] Solid State Phys Lab, Delhi 110054, India
[3] Natl Brain Res Ctr, Manesar 122050, India
来源：
SYNTHETIC METALS | 2010年 / 160卷 / 19-20期
关键词：
Poly (3-hexylthiophene); Crosslinkers; Bisazides; Diode devices; FIELD-EFFECT TRANSISTORS; PHOTOVOLTAIC PROPERTIES; NMR TECHNIQUES; HOLE MOBILITY; POLY(3-HEXYLTHIOPHENE); POLYTHIOPHENES; BLENDS; FILMS;
D O I：
10.1016/j.synthmet.2010.07.023
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Diode devices (glass/ITO/polymer/Al) have been fabricated using poly (3-hexylthiophene) (P3HT) crosslinked with two different biaryl crosslinkers. Crosslinking was performed by exposing the thin films with different wt% of crosslinker to UV irradiation and progress of crosslinking was monitored by IR spectroscopy. An increase in hole mobility of two orders of magnitude has been observed after crosslinking. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：2061 / 2064
页数：4
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