Nikon EUVL development progress update

被引：3

作者：

Miura, Takaharu ^{[1
]}

Murakami, Katsuhiko ^{[1
]}

Kawai, Hidemi ^{[1
]}

Kohama, Yoshiaki ^{[1
]}

Morita, Kenji ^{[1
]}

Hada, Kazunari ^{[1
]}

Ohkubo, Yukiharu ^{[1
]}

机构：

[1] Nikon Inc, Precis Equipment Co, Dept Dev 2, Kumagaya, Saitama 3608559, Japan

来源：

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY | 2010年 / 7636卷

关键词：

EUVL; Extreme Ultra Violet Lithography; EUV exposure tool; Projection Optics;

D O I：

10.1117/12.846459

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Nikon has been developing the full field exposure tool called EUV1 for process development of 32nm hp node and beyond. The unique feature of EUV1 is the capability of variable illumination coherence and off-axis illumination. EUV1 was installed in Selete and used for EUV lithography process development. Nikon also has conducted continuous collaborative works with customers using EUV1. Since the last SPIE Symposium in 2009, many exposure results with EUV1 tools were obtained. They showed excellent resolution capability beyond 24nm L/S with off-axis illumination and stable overlay capability of 10nm (Mean + 3 sigma). Process development exposures of test chip patterns are ongoing. With regard to HVM tool development, imaging capability with high NA projection optics and throughput capability are reviewed.

引用

页数：16