Improving the electrical conductivity of Siligraphene SiC7 by strain

被引：14

作者：

Houmad, M. ^{[1
]}

Essaoudi, I. ^{[2
,4
]}

Ainane, A. ^{[2
,3
,4
]}

El Kenz, A. ^{[1
]}

Benyoussef, A. ^{[1
]}

Ahuja, R. ^{[4
]}

机构：

[1] Mohammed V Univ, Fac Sci, Lab Magnetism & Phys High Energies, Phys Dept, BP 1014, Rabat, Morocco

[2] Univ Moulay Ismail, Lab Phys Mat & Modelisat Syst LP2MS, Unite Associee CNRST URAC 08, Fac Sci,Phys Dept, BP 11201, Meknes, Morocco

[3] Max Planck Inst Phys Complexer Syst, Nothnitzer Str 38, D-01187 Dresden, Germany

[4] Uppsala Univ, Dept Phys & Astron, Condensed Matter Theory Grp, S-75120 Uppsala, Sweden

来源：

OPTIK | 2019年 / 177卷

关键词：

Semiconductors; Biaxial strains; Siligraphene g-SiC7; Electrical conductivity; GENERALIZED GRADIENT APPROXIMATION; SILICON-DOPED GRAPHENE; SOLAR-CELLS; NANOTUBES; OXIDE; ZNO;

D O I：

10.1016/j.ijleo.2018.08.123

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Using the 1st principle calculations founded on Density Functional Theory (DFT), we examined the strain effect of band gap (BG) and electrical property (EP) of Siligraphene (g-SiC7) under biaxial strains (Compressive and tensile) using Generalized Gradient Approximation (GGA). We found that the BG of g-SiC7 was decreasing as function of the strain and we remarked that the electrical conductivity of g-SiC7 under biaxial strains become important of 6% for tension effect. For the compressive, we obtained an increase for all compressive applying, but we remarked the higher and lower values are successively -2% and -6%. Last not least, we deduced that it's possible to increase the electrical conductivity of g-SiC7. Also, this material can be used in solar cell applications and for photo-voltaic (PV) applications as a light donor material.

引用

页码：118 / 122

页数：5

共 45 条

[1] Enhancing the electron transfer and band potential tuning with long-term stability of ZnO based dye-sensitized solar cells by gallium and tellurium as dual-doping [J].