Solid solution of carbon in β-SiC

被引：20

作者：

Gadzira, M

Gnesin, G

Mykhaylyk, O

Britun, V

Andreyev, O

机构：

[1] Ukrainian Acad Sci, Inst Problems Mat Sci, UA-252680 Kiev, Ukraine

[2] Inst Superhard Mat, UA-254153 Kiev, Ukraine

来源：

MATERIALS LETTERS | 1998年 / 35卷 / 5-6期

关键词：

silicon carbide; solid solution; carbon; lattice parameter; ceramics; micro hardness;

D O I：

10.1016/S0167-577X(97)00263-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The solid solution of carbon in beta-SiC powders (a = 4.3541 Angstrom) containing the additives of silicon nitride and oxynitride were obtained by interaction of fine silicon and natural graphite particles using the self-propagating high-temperature synthesis. The structural variations of synthesized powders, as a result of their sintering under high pressure and temperature, were studied. At the disintegration, the solid solution of carbon is formed in the sintered beta-SiC 'pressed' graphite samples alongside the ordinary graphite additive. It leads to a microhardness change from 39.5 to 29.0 GPa. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：277 / 282

页数：6

共 19 条

[1]

Akselrud L. G., 1989, 12 EUR CRYSTALLOGRAP, V3, P155

[2] THEORY OF NATIVE DEFECTS, DOPING AND DIFFUSION IN DIAMOND AND SILICON-CARBIDE [J].

BERNHOLC, J ;

KAJIHARA, SA ;

WANG, C ;

ANTONELLI, A ;

DAVIS, RF .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 11 (1-4) :265-272

[3]

BONNKE V, 1966, BER DTSCH KERAM GES, V2, P180

[4]

BUNDY FP, 1969, J CHEM PHYS, V46, P3436

[5]

FRANTSEVICH IN, 1987, INFLUENCE HIGH PRESS, V1

[6]

Gadzyra NF, 1996, INORG MATER+, V32, P721

[7] DIRECT EVIDENCE FOR HOMONUCLEAR BONDS IN AMORPHOUS SIC [J].

GORMAN, M ;

SOLIN, SA .

SOLID STATE COMMUNICATIONS, 1974, 15 (04) :761-765

[8] EPITAXIALLY GROWN BETA-SIC ON SI(100) AND SI(111) SUBSTRATES BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

JUST, W ;

MUHLHOFF, L ;

SCHOLZ, C ;

WEBER, T .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 11 (1-4) :317-319

[9] MBE GROWTH OF 3C.SIC/6H.SIC AND THE ELECTRIC PROPERTIES OF ITS P-N-JUNCTION [J].

KANEDA, S ;

SAKAMOTO, Y ;

MIHARA, T ;

TANAKA, T .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :536-542

[10]

KHAENKO BV, 1995, INORG MATER+, V31, P304

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