A 26-ppm/°C, 13.2-ppm/V, 0.11%-inaccuracy picowatt voltage reference with PVT compensation and fast startup

被引：20

作者：

Hu, Jinlong ^{[1
,2
]}

Xu, Huachao ^{[1
,2
]}

Wang, Jin ^{[1
,2
]}

Liang, Ke ^{[1
,2
]}

Lu, Chao ^{[3
]}

Li, Guofeng ^{[1
,2
]}

机构：

[1] Nankai Univ, Coll Elect Informat & Opt Engn, Tianjin Key Lab Optoelect Sensor & Sensing Networ, Tianjin, Peoples R China

[2] Nankai Univ, Engn Res Ctr Thin Film Optoelect Technol, Minist Educ, Tianjin, Peoples R China

[3] Southern Illinois Univ, Sch Elect Comp & Biomed Engn, Carbondale, IL 62901 USA

来源：

MICROELECTRONICS JOURNAL | 2021年 / 115卷

关键词：

Picowatt voltage reference; Internet-of-Things; PVT compensation; Setup time; CMOS SUBTHRESHOLD VOLTAGE; PPM/DEGREES-C; BANDGAP; RESISTORS; NW;

D O I：

10.1016/j.mejo.2021.105189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a picowatt voltage reference for Internet-of-Things applications, which require fast response speed and high insensitivity to variations of the process, supply voltage, and temperature (PVT). By employing a novel topology with a startup circuit and an effective PVT compensation method, the proposed voltage reference can achieve both high PVT stability and shorten the setup time. Based on a 0.18 mu m standard CMOS process, post-layout simulation results show that the proposed design achieves a mean reference voltage of 755.6 mV with a variation coefficient of 0.11 % without trimming. The line regulation is 13.2 ppm/V over a supply voltage from 1 V to 1.8 Vat 27 degrees C. The average temperature coefficient is about 26 ppm/degrees C in a temperature range from -20 degrees C to 120 degrees C. The 1 % settling time of the output reference voltage is about 274 mu s.

引用

页数：11

共 34 条

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