Microfabrication of piezoelectric MEMS

被引:6
作者
Baborowski, J [1 ]
机构
[1] Swiss Ctr Elect & Microtechnol, RF&PIEZOELECTRIC COMPONENTES, Neuchatel, Switzerland
[2] Swiss Fed Inst Technol, EPFL, Ceram Lab, Fac Engn, CH-1015 Lausanne, Switzerland
关键词
micromachining; PZT; plasma etching; ultrasonic transducers;
D O I
10.1080/10584580490894302
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper we present an overview of processes for fabrication of piezoelectric thin film devices using PZT(Pb(ZrxTi1-x)O-3) in planar structures. These structures are used in cantilever-like and membrane configurations for sensing and actuation. Elaboration of a compatible wet and dry etching sequence for patterning of PZT, electrodes, SiO2 and silicon substrate is the key issues. The method for compensation of mechanical stresses to obtain flat, multilayer structures is demonstrated. Definition of membrane thickness and release of the structures are obtained by Deep Reactive Ion Etching of silicon or by surface micromachining. The complete process has been used for fabrication of cantilever arrays, ultrasonic transducers and pressure sensors. Excellent permittivity and transverse piezoelectric coefficient of PZT have been obtained with the final devices.
引用
收藏
页码:3 / +
页数:18
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