Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application

被引：22

作者：

Lin, Yueh Chin ^{[1
]}

Huang, Yu Xiang ^{[2
]}

Huang, Gung Ning ^{[3
]}

Wu, Chia Hsun ^{[1
]}

Yao, Jing Neng ^{[3
]}

Chu, Chung Ming ^{[4
]}

Chang, Shane ^{[1
]}

Hsu, Chia Chieh ^{[1
]}

Lee, Jin Hwa ^{[2
]}

Kakushima, Kuniyuki ^{[5
]}

Tsutsui, Kazuo ^{[5
]}

Iwai, Hiroshi ^{[5
,6
]}

Chang, Edward Yi ^{[1
,3
,6
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Photon Syst, Tainan 711, Taiwan

[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[4] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[5] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Tokyo 2268503, Japan

[6] Natl Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 08期

关键词：

GaN; MIS-HEMT; LaHfOx; gate recessed; gate insulator; threshold voltage hysteresis;

D O I：

10.1109/LED.2017.2722002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports an E-mode GaN MIS-HEMT using a composite La2O3/HfO2 gate insulator for power device applications. The composite dielectric formed an amorphous LaHfOx layer after post-deposition annealing. The GaN MIS-HEMT with amorphous LaHfOx gate dielectric showed good oxide film quality and excellent HfLaOx/GaN interface properties, as demonstrated by the measured C-V characteristics. Consequently, the E-mode MIS-HEMT was determined to show good V-th stability with only a slight increase in the dynamic R-on after high drain bias stress.

引用

页码：1101 / 1104

页数：4

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