Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

被引：88

作者：

Janardhanam, V. ^{[2
]}

Lee, Hoon-Ki ^{[1
]}

Shim, Kyu-Hwan ^{[1
]}

Hong, Hyo-Bong ^{[3
]}

Lee, Soo-Hyung ^{[3
]}

Ahn, Kwang-Soon ^{[4
]}

Choi, Chel-Jong ^{[1
,2
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, SPRC, Jeonju 561756, South Korea

[2] Chonbuk Natl Univ, Dept BIN Fus Technol, Jeonju 561756, South Korea

[3] ETRI, Future Technol Res Grp, Taejon 305700, South Korea

[4] Yeungnam Univ, Sch Display & Chem Engn, Gyongsan 712749, South Korea

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 504卷 / 01期

关键词：

Schottky contacts; I-V-T characteristics; InP; Ti; Frenkel-Poole emission; Schottky emission; BARRIER DIODES; INTERFACIAL LAYER; CONTACTS; JUNCTIONS; EPITAXY; HEIGHT;

D O I：

10.1016/j.jallcom.2010.05.074

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the temperature dependent current-voltage (I-V) characteristics of Ti Schottky contacts to p-type InP. The Ti/p-type InP Schottky diode yielded an ideality factor of 1.08 showing good rectifying behavior with a barrier height of 0.73 eV at 300 K. The capacitance-voltage (C-V) characteristics of the Ti Schottky contact to p-type InP have been measured at room temperature and at different frequencies. The barrier heights from C-V measurements are calculated to be 0.71, 0.72 and 0.77 eV at 10 kHz, 100 kHz and I MHz, respectively. The discrepancy of barrier heights obtained from I-V at 300 K and C-V characteristics measured at f = 1 MHz at 300 K is negligible due to homogenous nature of Schottky diode structures. The characteristic energy of the diode at 300 K showed thermionic emission to be the dominating current mechanism. The analysis of the reverse current-voltage characteristics of the Ti Schottky contact to p-type InP reveals that the main process involved in leakage current could be associated with the Frenkel-Poole emission at 300 K, while at 350 K and 400 K, the Schottky emission. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：146 / 150

页数：5

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