The effect of n-GaAs carrier concentration on current gain in InGaP/GaAs heterojunction bipolar transistors

被引：2
作者：
Yamada, Hisashi [1 ]
Fukuhara, Noboru [1 ]
Hata, Masahiko [1 ]
机构：
[1] Sumitomo Chem Co Ltd, Tsukuba Res Lab, Tsukuba, Ibaraki 3003294, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 8A期
关键词：
MOCVD; Si concentration; current gain; point defects; thermal annealing;
D O I：
10.1143/JJAP.46.5122
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of n-GaAs carrier concentration in the Si-doped sub-collector layer on InGaP/GaAs heterojunction bipolar transistor (HBT) was investigated. Current gain slightly decreased with carrier concentration increased from 5 x 10(17) to 2 x 10(18) cm(-3), while it dramatically decreased with carrier concentration increased over 2 x 10(18) cm(-3). It was also found that current gain with a high carrier concentration of 4 x 10(18) cm(-3) decreased with annealing time. Gummel plots revealed that the reduction in current gain is caused by creation of recombination centers in the base layer. We suggest the diffusion of Ga interstitial, which is generated together with Ga vacancy, is the origin of current gain degradation during the post-growth of the sub-collector layer.
引用
收藏
页码：5122 / 5124
页数：3
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