Electrical and interface state density properties of the 4H-nSiC/[6,6]-phenyl C61-butyric acid methyl ester/Au diode

被引：31

作者：

Aydin, M. E. ^{[2
]}

Yakuphanoglu, Fahrettin ^{[1
]}

机构：

[1] Firat Univ, Dept Phys, TR-23169 Elazig, Turkey

[2] Dicle Univ, Fac Sci & Arts, Dept Phys, TR-23169 Elazig, Turkey

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 08期

关键词：

SiC diode; organic layer; interfacial state density;

D O I：

10.1016/j.mee.2008.05.031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical and interface state density properties of the Ni/4H-nSiC/PCBM/Au diode have been investigated by current-voltage, capacitance-voltage and conductance-frequency methods. The ideality factor, barrier height and series resistance values of the diode were found to be 2.28, 1.10eV and 3.76 x 10(4) Omega, respectively. The diode shows a non-ideal I-V behaviour with an ideality factor greater than unity that could be ascribed to the interfacial layer, interface states and series resistance. The obtained barrier height (1.10 eV) of the Ni/4H-nSiC/PCBM/Au diode is lower than that of Ni/4H-nSiC diode (1.32 eV). This indicates that the PCBM organic layer induces a change of 160 meV in the barrier height of the Ni/4H-nSiC diode. The interface state density of the diode was determined from G(p)/omega-f plots and was of order of 5.61 x 10(12) eV(-1) cm(-2). (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1836 / 1841

页数：6

共 27 条

[1] Schottky-barrier behavior of metals on n- and p-type 6H-SiC -: art. no. 075312 [J].

Aboelfotoh, MO ;

Fröjdh, C ;

Petersson, CS .

PHYSICAL REVIEW B, 2003, 67 (07)

[2] The electrical characteristics of sn/methyl-red/p-type Si/Al contacts [J].

Aydin, M. E. ;

Turut, A. .

MICROELECTRONIC ENGINEERING, 2007, 84 (12) :2875-2882

[3] Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts [J].

Aydin, Mehmet Enver ;

Yildirim, Nezir ;

Tueruet, Abdulmecit .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (04)

[4] Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current-voltage and capacitance-voltage methods [J].

Aydin, Mehmet Enver ;

Yakuphanoglu, Fahrettin ;

Eom, Jae-Hoon ;

Hwang, Do-Hoon .

PHYSICA B-CONDENSED MATTER, 2007, 387 (1-2) :239-244

[5] On the some electrical properties of the non-ideal PPy/p-Si/Al structure [J].

Aydogan, S ;

Saglam, M ;

Türüt, A .

POLYMER, 2005, 46 (24) :10982-10988

[6] Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers [J].

Campbell, IH ;

Rubin, S ;

Zawodzinski, TA ;

Kress, JD ;

Martin, RL ;

Smith, DL ;

Barashkov, NN ;

Ferraris, JP .

PHYSICAL REVIEW B, 1996, 54 (20) :14321-14324

[7] Electrical characterization of inhomogeneous Ti/4H-SiC Schottky contacts [J].

Defives, D ;

Noblanc, O ;

Dua, C ;

Brylinski, C ;

Barthula, M ;

Meyer, F .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :395-401

[8] Laterally inhomogeneous barrier analysis of the methyl violet/p-Si organic/inorganic hybrid Schottky structures [J].

Gullu, O. ;

Baris, O. ;

Biber, M. ;

Turut, A. .

APPLIED SURFACE SCIENCE, 2008, 254 (10) :3039-3044

[9] Nanometer-scale test of the Tung model of Schottky-barrier height inhomogeneity [J].

Im, HJ ;

Ding, Y ;

Pelz, JP ;

Choyke, WJ .

PHYSICAL REVIEW B, 2001, 64 (07)

[10]

Itoh A, 1996, INST PHYS CONF SER, V142, P685

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