Enhanced spin-polarized transport through DNA double helix by gate voltage

被引:60
作者
Guo, Ai-Min [1 ]
Sun, Qing-feng [1 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
来源
PHYSICAL REVIEW B | 2012年 / 86卷 / 03期
关键词
CHARGE-TRANSPORT; SPINTRONICS;
D O I
10.1103/PhysRevB.86.035424
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on a way to manipulate the spin transport through double-stranded DNA contacted by normal-metal electrodes. On the basis of an effective model Hamiltonian, the conductance and the spin polarization are calculated in the presence of a gate voltage by using the Landauer-Buttiker formula. Our results indicate that the spin polarization presents strong dependence on the magnitude as well as the direction of the gate voltage. The spin polarization can be significantly enhanced by tuning the gate voltage and shows oscillating behavior with increasing the DNA length.
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页数:5
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