Improving the electrical performance of a conductive atomic force microscope with a logarithmic current-to-voltage converter

被引：13

作者：

Aguilera, L. ^{[1
]}

Lanza, M. ^{[1
]}

Porti, M. ^{[1
]}

Grifoll, J. ^{[1
]}

Nafria, M. ^{[1
]}

Aymerich, X. ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2008年 / 79卷 / 07期

关键词：

D O I：

10.1063/1.2952058

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A new configuration of conductive atomic force microscope (CAFM) is presented, which is based in a standard CAFM where the typical I-V converter has been replaced by a log I-V amplifier. This substitution extends the current dynamic range from 1-100 pA to 1 pA-1 mA. With the broadening of the current dynamic range, the CAFM can access new applications, such as the reliability evaluation of metal-oxide-semiconductor gate dielectrics. As an example, the setup has been tested by analyzing breakdown spots induced in SiO(2) layers. (C) 2008 American Institute of Physics.

引用

页数：5

共 15 条

[1] Charge trapping and degradation of HfO2/SiO2 MOS gate stacks observed with enhanced CAFM [J].

Aguilera, L ;

Porti, M ;

Nafría, M ;

Aymerich, X .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (03) :157-159

[2] Enhanced electrical performance for conductive atomic force microscopy [J].

Blasco, X ;

Nafria, M ;

Aymerich, X .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2005, 76 (01)

[3] Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction [J].

Degraeve, R ;

Kaczer, B ;

Groeseneken, G .

MICROELECTRONICS RELIABILITY, 1999, 39 (10) :1445-1460

[4]

Durig U, 1997, REV SCI INSTRUM, V68, P3814, DOI 10.1063/1.1148005

[5] Conductive atomic force microscopy studies of thin SiO2 layer degradation [J].

Fiorenza, P ;

Polspoel, W ;

Vandervorst, W .

APPLIED PHYSICS LETTERS, 2006, 88 (22)

[6] Breakdown kinetics at nanometer scale of innovative MOS devices by conductive atomic force microscopy [J].

Fiorenza, Patrick ;

Lo Nigro, Raffaella ;

Raineri, Vito ;

Salinas, Dario .

MICROELECTRONIC ENGINEERING, 2007, 84 (03) :441-445

[7] C-AFM-based thickness determination of thin and ultra-thin SiO2 films by use of different conductive-coated probe tips [J].

Frammelsberger, Werner ;

Benstetter, Guenther ;

Kiely, Janice ;

Stamp, Richard .

APPLIED SURFACE SCIENCE, 2007, 253 (07) :3615-3626

[8] Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy -: art. no. 074315 [J].

Kremmer, S ;

Wurmbauer, H ;

Teichert, C ;

Tallarida, G ;

Spiga, S ;

Wiemer, C ;

Fanciulli, M .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (07)

[9] Current measurements in a wide dynamic range -: applications in electrochemical nanotechnology [J].

Meszaros, Gabor ;

Li, Chen ;

Pobelov, Ilya ;

Wandlowski, Thomas .

NANOTECHNOLOGY, 2007, 18 (42)

[10] The effect of nanoscale nonuniformity of oxygen vacancy on electrical and reliability characteristics of HfO2 MOSFET devices [J].

Park, Hokyung ;

Jo, Minseok ;

Choi, Hyejung ;

Hasan, Musarrat ;

Choi, Rino ;

Kirsch, Paul D. ;

Kang, Chang Young ;

Lee, Byoung Hun ;

Kim, Tae-Wook ;

Lee, Takhee ;

Hwang, Hyunsang .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (01) :54-56

← 1 2 →