Energetics of Island Formation of AlAs, GaAs, and InAs on Si(100)

被引：3
作者：
Lee, Geunjung [1 ]
Efimov, Oleg [1 ]
Yoon, Young-Gui [1 ]
机构：
[1] Chung Ang Univ, Dept Phys, Seoul 156756, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2012年 / 60卷 / 05期
基金：
新加坡国家研究基金会;
关键词：
AlAs; GaAs; InAs; Si(100); Energetics; QUANTUM DOTS; EPITAXIAL-GROWTH; ATOMIC-STRUCTURE; SI; SI(111); MONOLAYER; SUBSTRATE; SILICON;
D O I：
10.3938/jkps.60.777
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We study the energetics of island formation of AlAs, GaAs, and InAs on Si(100)2x1 substrates from first-principles. Si(100) 2x1: As is stable under As-rich conditions in all cases. Si(100)2x1:(AlAs) and Si(100) 2x1:(GaAs) are stable under Al-rich and Ga-rich conditions, respectively. However, the surface energy of Si(100) 2x1: InAs is higher than that of Si(100)2x1: As under In-rich conditions. The energies of thicker epitaxial overlayer films of AlAs, GaAs, and InAs are predicted to be higher than the corresponding energies of these monolayer films.
引用
收藏
页码：777 / 780
页数：4
相关论文
共 50 条
  • [1] Energetics of island formation of AlAs, GaAs, and InAs on Si(100)
    Geunjung Lee
    Oleg Efimov
    Young-Gui Yoon
    Journal of the Korean Physical Society, 2012, 60 : 777 - 780
  • [2] Atomic Structures of a Monolayer of AlAs, GaAs, and InAs on Si(111)
    Lee, Geunjung
    Yoon, Young-Gui
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 57 (02) : 251 - 254
  • [3] InAs nanocrystal growth on Si (100)
    Mano, T
    Fujioka, H
    Ono, K
    Watanabe, Y
    Oshima, M
    APPLIED SURFACE SCIENCE, 1998, 130 : 760 - 764
  • [4] Nucleationless island formation in SiGe/Si(100) heteroepitaxy
    Sutter, P
    Lagally, MG
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 45 - 48
  • [5] INAS ISLAND FORMATION ALIGNED ALONG THE STEPS ON A GAAS(001) VICINAL SURFACE
    IKOMA, N
    OHKOUCHI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (6B): : L724 - L726
  • [6] Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers
    Kim, Dongyoung
    Tang, Mingchu
    Wu, Jiang
    Hatch, Sabina
    Maidaniuk, Yurii
    Dorogan, Vitaliy
    Mazur, Yuriy I.
    Salamo, Gregory J.
    Liu, Huiyun
    PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES VI, 2017, 10099
  • [7] Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates
    Abramkin, D. S.
    Petrushkov, M. O.
    Putyato, M. A.
    Semyagin, B. R.
    Shamirzaev, T. S.
    SEMICONDUCTORS, 2018, 52 (11) : 1484 - 1490
  • [8] EFFECT OF ALAS BUFFER LAYERS ON EPITAXIAL-GROWTH OF GAAS ON SI(100)
    KOBAYASHI, H
    KAWABE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (08): : L1342 - L1345
  • [9] Selective growth of InAs islands on patterned GaAs (100) substrate
    Cui, CX
    Chen, YH
    Ren, YY
    Xu, B
    Jin, P
    Zhao, C
    Wang, ZG
    SUPERLATTICES AND MICROSTRUCTURES, 2006, 39 (05) : 446 - 453
  • [10] Energetics of InAs thin films and islands on the GaAs(001) substrate
    Wang, LG
    Kratzer, P
    Scheffler, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7B): : 4298 - 4301
12345