Design and fabrication of InAsSb detector.

A study of the optimisation of the detectivity of a mid infrared double heterostructure photovoltaic detector is proposed. Simple approximate analytic expressions for the dark current are compared with full numerical calculations, and give physical insight on the mechanisms dominating the dark current. The analysis is performed step by step in different structures, from a simple p-n junction to the full double heterostructure. The influence of temperature, barrier band gap energy and absorbing layer thickness in a double heterostructure, doping density in the active region, on diffusion and generation-recombination mechanisms is analysed.