Dual-Frequency Behavior of Stacked High T c Superconducting Microstrip Patches

被引：10
作者：
Benkouda, Siham [1 ]
Amir, Mounir [1 ]
Fortaki, Tarek [1 ]
Benghalia, Abdelmadjid [2 ]
机构：
[1] Univ Batna, Dept Elect, Batna 05000, Algeria
[2] Univ Constantine, Dept Elect, Constantine 25000, Algeria
来源：
JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES | 2011年 / 32卷 / 11期
关键词：
Superconducting microstrip patches; Stacked patches; Dual-frequency operation; DOMAIN ANALYSIS; ANTENNAS; RADIATION; APERTURE;
D O I：
10.1007/s10762-011-9842-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dual-frequency behavior of stacked high T (c) superconducting rectangular microstrip patches fabricated on a two-layered substrate is investigated using a full-wave spectral analysis in conjunction with the complex resistive boundary condition. Using a matrix representation of each layer, the dyadic Green's functions of the problem are efficiently determined in the vector Fourier transform domain. The stationary phase method is used for computing the radiation electric field of the antenna. The proposed approach is validated by comparison of the computed results with previously published data. Variations of the lower and upper resonant frequencies, bandwidth and quality factor with the operating temperature are given. Results showing the effects of the bottom patch thickness as well as the top patch thickness on the dual-frequency behavior of the stacked configuration are also presented and discussed. Finally, for a better comprehension of the dual-frequency operation, a comparison between the characteristics of the lower and upper resonances is given.
引用
收藏
页码：1350 / 1366
页数：17
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