The low-field mobility of carriers in the channel of a Schottky-gate field-effect transistor

被引：0
作者：
Bocharova, IA
Ryzhkov, MP
机构：
[1] University of Salford
[2] Department of Electrical and Computer Engineering, University of Maryland, College Park
来源：
MEASUREMENT TECHNIQUES | 2001年 / 44卷 / 03期
关键词：
D O I：
10.1023/A:1010986109073
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A method which enables the accuracy in determining the low-field mobility of carriers in the channel of Schottky-gate field-effect transistors to be increased is considered. The method is based on a model which fakes into account the slanting effect of the substrate.
引用
收藏
页码：321 / 323
页数：3
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