Thermoelectric properties of monolayer MSe2 (M = Zr, Hf): low lattice thermal conductivity and a promising figure of merit

被引:88
作者
Ding, Guangqian [1 ,2 ]
Gao, G. Y. [1 ,2 ]
Huang, Zhishuo [3 ]
Zhang, Wenxu [3 ]
Yao, Kailun [1 ,2 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China
[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
基金
中国国家自然科学基金;
关键词
thermoelectric; TMDC; phonon; monolayer; BULK; PERFORMANCE;
D O I
10.1088/0957-4484/27/37/375703
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Monolayer transition-metal dichalcogenides (TMDCs) MX2 (M = Mo, W, Zr, Hf, etc; X = S, Se, Te) have become well-known in recent times for their promising applications in thermoelectrics and field effect transistors. In this work, we perform a systematic study on the thermoelectric properties of monolayer ZrSe2 and HfSe2 using first-principles calculations combined with Boltzmann transport equations. Our results point to a competitive thermoelectric figure of merit (close to 1 at optimal doping) in both monolayer ZrSe2 and HfSe2, which is markedly higher than previous explored monolayer TMDCs such as MoS2 and MoSe2. We also reveal that the higher figure of merits arise mainly from their low lattice thermal conductivity, and this is partly due to the strong coupling of acoustic modes with low frequency optical modes. It is found that the figure of merits can be better optimized in n-type than in p-type. In particular, the performance of HfSe2 is superior to ZrSe2 at a higher temperature. Our results suggest that monolayer ZrSe2 and HfSe2 with lower lattice thermal conductivity than usual monolayer TMDCs are promising candidates for thermoelectric applications.
引用
收藏
页数:7
相关论文
共 33 条
  • [1] PROJECTOR AUGMENTED-WAVE METHOD
    BLOCHL, PE
    [J]. PHYSICAL REVIEW B, 1994, 50 (24): : 17953 - 17979
  • [2] Low thermal conductivity and triaxial phononic anisotropy of SnSe
    Carrete, Jesus
    Mingo, Natalio
    Curtarolo, Stefano
    [J]. APPLIED PHYSICS LETTERS, 2014, 105 (10)
  • [3] Thermoelectric transport coefficients in mono-layer MoS2 and WSe2: Role of substrate, interface phonons, plasmon, and dynamic screening
    Ghosh, Krishnendu
    Singisetti, Uttam
    [J]. JOURNAL OF APPLIED PHYSICS, 2015, 118 (13)
  • [4] Tuning Electronic and Magnetic Properties of Early Transition-Metal Dichalcogenides via Tensile Strain
    Guo, Hongyan
    Lu, Ning
    Wang, Lu
    Wu, Xiaojun
    Zeng, Xiao Cheng
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (13) : 7242 - 7249
  • [5] High performance bulk thermoelectrics via a panoscopic approach
    He, Jiaqing
    Kanatzidis, Mercouri G.
    Dravid, Vinayak P.
    [J]. MATERIALS TODAY, 2013, 16 (05) : 166 - 176
  • [6] Phonon thermal transport in Bi2Te3 from first principles
    Hellman, Olle
    Broido, David A.
    [J]. PHYSICAL REVIEW B, 2014, 90 (13):
  • [7] A Revisit to High Thermoelectric Performance of Single-layer MoS2
    Jin, Zelin
    Liao, Quanwen
    Fang, Haisheng
    Liu, Zhichun
    Liu, Wei
    Ding, Zhidong
    Luo, Tengfei
    Yang, Nuo
    [J]. SCIENTIFIC REPORTS, 2015, 5
  • [8] Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
    Kresse, G
    Furthmuller, J
    [J]. PHYSICAL REVIEW B, 1996, 54 (16): : 11169 - 11186
  • [9] Thermoelectric Response of Bulk and Mono layer MoSe2 and WSe2
    Kumar, S.
    Schwingenschloegl, U.
    [J]. CHEMISTRY OF MATERIALS, 2015, 27 (04) : 1278 - 1284
  • [10] From Bulk to Monolayer MoS2: Evolution of Raman Scattering
    Li, Hong
    Zhang, Qing
    Yap, Chin Chong Ray
    Tay, Beng Kang
    Edwin, Teo Hang Tong
    Olivier, Aurelien
    Baillargeat, Dominique
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (07) : 1385 - 1390