Comparative study of pore size of low-dielectric-constant porous spin-on-glass films using different methods of nondestructive instrumentation

被引：42
作者：
Kondoh, E
Baklanov, MR
Lin, E
Gidley, D
Nakashima, A
机构：
[1] Yamanashi Univ, Fac Engn, Dept Mech Syst Engn, Kofu, Yamanashi 4008511, Japan
[2] IMEC, Silicon Proc Technol Div, B-3001 Louvain, Belgium
[3] Natl Inst Stand & Technol, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA
[4] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
[5] Catalysts & Chem Ind Co Ltd, Fine Chem Res Ctr, Fukuoka 8080027, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 4A期
关键词：
low-dielectric-constant films; pore size distribution; ellipsometry; neutron scattering; positronium annihilation;
D O I：
10.1143/JJAP.40.L323
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The pore sizes of hydrogen-methyl-siloxane-based porous spin-on-glass (SOG) thin films having different k values (k = 1.8-2.5) are comparatively studied using different nondestructive instrumental ways and also with reference to sorption porosimetry. The pore size and its spread are found to increase with increasing porosity, or with decreasing dielectric constant.
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页码：L323 / L326
页数：4
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