A Unified Carrier-Transport Model for the Nanoscale Surrounding-Gate MOSFET Comprising Quantum-Mechanical Effects

被引：12

作者：

Hu, Guangxi ^{[1
]}

Gu, Jinglun ^{[1
]}

Hu, Shuyan ^{[2
]}

Ding, Ying ^{[1
]}

Liu, Ran ^{[1
]}

Tang, Ting-Ao ^{[1
]}

机构：

[1] Fudan Univ, State Key Lab Applicat Specif Integrated Circuits, Sch Microelect, Shanghai 200433, Peoples R China

[2] Tongji Univ, Sch Elect & Informat, Shanghai 200092, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 07期

关键词：

Device simulation; nanowire; semiconductor device modeling; surrounding-gate metal-oxide-semiconductor field-effect transistors (SG MOSFETs); WIRE;

D O I：

10.1109/TED.2011.2136343

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A unified carrier-transport model for a nanoscale surrounding-gate metal-oxide-semiconductor field-effect transistor (SG MOSFET) is developed. The model is based on McKelvey's flux theory and includes quantum-mechanical effects. The model is applicable for both ballistic- and diffusive-transport regimes. The model results fit with the simulation results extremely well in both transport regimes for the small drain biases V-DS < 1 V. With the model, the characteristics of a drain-to-source current of an SG MOSFET working in the linear region can be very quickly and easily obtained. The model will provide some guidance for the practical use of SG nanowire transistors.

引用

页码：1830 / 1836

页数：7

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