Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes

被引：8

作者：

Kang, Min-Seok ^{[1
]}

Joo, Sung-Jae ^{[2
]}

Bahng, Wook ^{[2
]}

Lee, Ji-Hoon ^{[1
]}

Kim, Nam-Kyun ^{[2
]}

Koo, Sang-Mo ^{[1
]}

机构：

[1] Kwangwoon Univ, Sch Elect & Informat, Seoul 139701, South Korea

[2] Korea Electrotechnol Res Inst, Power Semicond Res Grp, Chang Won 641120, South Korea

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

关键词：

REFLECTANCE;

D O I：

10.1186/1556-276X-6-236

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this study, nano-scale honeycomb-shaped structures with anti-reflection properties were successfully formed on SiC. The surface of 4H-SiC wafer after a conventional photolithography process was etched by inductively coupled plasma. We demonstrate that the reflection characteristic of the fabricated photodiodes has significantly reduced by 55% compared with the reference devices. As a result, the optical response I-illumination/I-dark of the 4H-SiC photodiodes were enhanced up to 178%, which can be ascribed primarily to the improved light trapping in the proposed nano-scale texturing.

引用

页数：4

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