MeV ion implantation for modification of electronic, optical, and magnetic materials

被引：1

作者：

Roorda, S ^{[1
]}

Schiettekatte, F ^{[1
]}

Cai, M ^{[1
]}

Veres, T ^{[1
]}

Tchebotareva, A ^{[1
]}

机构：

[1] Univ Montreal, Dept Phys, Montreal, PQ H3C 3J7, Canada

来源：

MATERIALS MODIFICATION BY ION IRRADIATION | 1998年 / 3413卷

关键词：

ion implantation; optical materials; amorphous materials; magnetic materials; electronic materials;

D O I：

10.1117/12.321945

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The University of Montreal recently inaugurated a new 1.7 MV Tandem accelerator for materials research. It is being used to study a wide range of topics involving optical, electronic, opto-electronic, and magnetic materials. Current research includes: threshold dose for secondary damage in Si, gettering of impurities in Si by nano-cavities, ion beam mixing of metallic multilayers probed by giant magnetoresistance, tracks and deformations induced by multi-MeV ion beams, and high-resolution radial distribution function of pure amorphous silicon. A selection of recent results is discussed.

引用

页码：165 / 173

页数：9