Decay dynamics of neutral and charged excitonic complexes in single InAs/GaAs quantum dots

被引:16
作者
Feucker, M. [1 ]
Seguin, R. [1 ]
Rodt, S. [1 ]
Hoffmann, A. [1 ]
Bimberg, D. [1 ]
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
关键词
Charged particles - Complexation - Excitons - Phase transitions - Semiconducting gallium arsenide - Time domain analysis;
D O I
10.1063/1.2844886
中图分类号
O59 [应用物理学];
学科分类号
摘要
Systematic time-resolved measurements on neutral and charged excitonic complexes (X, XX, X+, and XX+) of 26 different single InAs/GaAs quantum dots are reported. The ratios of the decay times are discussed in terms of the number of transition channels determined by the excitonic fine structure and a specific transition time for each channel. The measured ratio for the neutral complexes is 1.7 deviating from the theoretically predicted value of 2. A ratio of 1.5 for the positively charged exciton and biexciton decay time is predicted and exactly matched by the measured ratio indicating identical specific transition times for the transition channels involved. (c) 2008 American Institute of Physics.
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页数:3
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