Au-induced crystallization of hydrogenated amorphous Si1-xGex (0.2 ≤ x ≤ 1) thin films with chemical source at low temperature

被引：9
作者：
Peng, Shanglong [1 ]
Shen, Xiaoyan [1 ]
Tang, Zeguo [1 ]
He, Deyan [1 ]
机构：
[1] Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2008年 / 107卷 / 2-3期
基金：
中国国家自然科学基金;
关键词：
Au-induced crystallization; SiGe films; Raman spectra; SOLID-PHASE CRYSTALLIZATION; INDUCED LATERAL CRYSTALLIZATION; METAL-INDUCED CRYSTALLIZATION; SIGE; SPECTROSCOPY; SIO2;
D O I：
10.1016/j.matchemphys.2007.08.009
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Au-induced crystallization of hydrogenated amorphous silicon-germanium thin films with chemical source (Au solution) at a low temperature (similar to 400 degrees C has been investigated. The structure and morphology of the samples were characterized with X-ray diffraction, Raman spectra and scanning electron microscopy. The effects of annealing temperature and the Ge fraction on the Raman spectra were analyzed. The Raman shifts of Ge-Ge and Si-Ge peaks with the Ge fraction were also discussed. It was shown that Au solution significantly promotes the crystallization of the films at low temperature. (c) 2007 Elsevier B.V. All rights reserved.
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收藏
页码：431 / 434
页数：4
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