Metal-semiconductor-metal traveling-wave photodetectors

被引：60
|
作者：
Shi, JW [1 ]
Gan, KG
Chiu, YJ
Chen, YH
Sun, CK
Yang, YJ
Bowers, JE
机构：
[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10617, Taiwan
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[3] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10617, Taiwan
[4] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 06期
基金：
美国国家科学基金会;
关键词：
low-temperature-grown GaAs; metal-semiconductor-metal photodetectors; self-alignment; traveling-wave photodetectors; ultrahigh-speed photodetectors;
D O I：
10.1109/68.924045
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate a novel type of traveling wave photodetector: "metal-semiconductor-metal traveling-wave photodetecor" (MSM-TWPD), Demonstrated devices were fabricated using low-temperature grown GaAs (LTG-GaAs), In order to achieve high internal quantum efficiency, the narrow spacing between electrodes was fabricated by the self-aligned process without e-beam lithography, Electrooptical sampling measurement results at different optical pumping level are reported. Ultrahigh bandwidth (0.8-ps, 570-GHz transform bandwidth) performance was observed even under high optical power illumination (similar to1.8 mW) with 8.1% net quantum efficiency. Compared with LTG-GaAs-based p-i-n TWPD and vertically illuminated MSM photodetector (PD), this novel TWPD has higher output saturation current with near terahertz electrical bandwidth, better quantum efficiency, and can be easily fabricated and integrated with other microwave devices. It thus promises the application in high-power distributed PD array or terahertz signal generation.
引用
收藏
页码：623 / 625
页数：3
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