On the Ge-content Dependent Noise Current in Si/SiGe MQW Photodetector

被引：0
|
作者：
Das, Mukul K. [1 ]
Das, N. R. [2 ]
机构：
[1] ISM, Dept Elect & Instrumentat, Dhanbad, Bihar, India
[2] CU, Inst Radio Phys & Elect, Kolkata, India
来源：
2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) | 2009年
关键词：
SiGe; Photodetector; Ge-Content; Shot noise; SNR;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the present paper, noise analysis of a resonant-cavity-enhanced Si/SiGe/Si p-i-n multiple quantum well photodetector has been carried out considering the effects of material parameters of SiGe and carrier trapping at heterointerfaces. Effect of Ge-content and applied bias on the signal to noise ratio have been investigated using numerical simulation.
引用
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页码：300 / +
页数：2
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