On the Ge-content Dependent Noise Current in Si/SiGe MQW Photodetector

被引：0
|
作者：
Das, Mukul K. [1 ]
Das, N. R. [2 ]
机构：
[1] ISM, Dept Elect & Instrumentat, Dhanbad, Bihar, India
[2] CU, Inst Radio Phys & Elect, Kolkata, India
来源：
2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) | 2009年
关键词：
SiGe; Photodetector; Ge-Content; Shot noise; SNR;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the present paper, noise analysis of a resonant-cavity-enhanced Si/SiGe/Si p-i-n multiple quantum well photodetector has been carried out considering the effects of material parameters of SiGe and carrier trapping at heterointerfaces. Effect of Ge-content and applied bias on the signal to noise ratio have been investigated using numerical simulation.
引用
收藏
页码：300 / +
页数：2
相关论文
共 50 条
  • [21] Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate
    Zhang, Chao
    Song, Jianjun
    Zhang, Jie
    Liu, Shulin
    ADVANCES IN CONDENSED MATTER PHYSICS, 2018, 2018
  • [22] Study on the effects of the Si capping layer growth conditions on the leakage current of Ge photodetector
    Okumura, Shigekazu
    Kinoshita, Keizo
    Fujikata, Junichi
    Simoyama, Takasi
    Ono, Hideki
    Tanaka, Yu
    Morito, Ken
    Horikawa, Tsuyoshi
    Mogami, Tohru
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (10)
  • [23] The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate with different thickness
    Wu, Po-Hung
    Huang, Ying-Sheng
    Hsu, Hung-Pin
    Li, Cheng
    Huang, Shi-Hao
    Tiong, Kwong-Kau
    APPLIED PHYSICS LETTERS, 2014, 104 (24)
  • [24] Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices
    Uppal, Suresh
    Kanoun, Mehdi
    Varzgar, John B.
    Chattopadhyay, Sanatan
    Olsen, Sarah
    O'Neill, Anthony
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 135 (03): : 207 - 209
  • [25] RBS analysis of MBE grown SiGe/(001)Si heterostructures with thin high Ge content SiGe channels for HMOS transistors
    Barradas, NP
    Sequeira, AD
    Franco, N
    Myronov, M
    Mironov, OA
    Phillips, PJ
    Parker, EHC
    MODERN PHYSICS LETTERS B, 2001, 15 (28-29): : 1297 - 1304
  • [26] Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si
    Miyasaka, Yuji
    Hiraki, Tatsurou
    Okazaki, Kota
    Takeda, Kotaro
    Tsuchizawa, Tai
    Yamada, Koji
    Wada, Kazumi
    Ishikawa, Yasuhiko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)
  • [27] Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn solution
    Ci, Ji-Wei
    Lian, Chen-Yin
    Uen, Wu-Yih
    Chen, Chien-Hsun
    Li, Chen-Yu
    THIN SOLID FILMS, 2020, 704
  • [28] Suppressing the dark current of metal-semiconductor-metal SiGe/Si heterojunction photodetector by using asymmetric structure
    Hwang, J. D.
    Chang, W. T.
    Chen, Y. H.
    Kung, C. Y.
    Hu, C. H.
    Chen, P. S.
    THIN SOLID FILMS, 2007, 515 (7-8) : 3837 - 3839
  • [29] Surface Detection of Strain-Relaxed Si1-xGex Alloys With High Ge-Content by Optical Second-Harmonic Generation
    Zhao, Ji-Hong
    Li, Chun-Hao
    Chen, Qi-Dai
    Cheng, Bu-Wen
    Sun, Hong-Bo
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2015, 51 (12)
  • [30] Impact of strain or Ge content on the threshold voltage of nanoscale strained-Si/SiGe bulk MOSFETs
    Kumar, M. Jagadesh
    Venkataraman, Vivek
    Nawal, Susheel
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2007, 7 (01) : 181 - 187
12345