Optical properties and microstructure of InGaN grown by molecular beam epitaxy

被引：0
作者：
Bottcher, T
Einfeldt, S
Figge, S
Kirchner, V
Hommel, D
Selke, H
Ryder, PL
Bertram, F
Riemann, T
Christen, J
Lunz, U
Becker, CR
机构：
[1] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany
[2] Univ Bremen, Inst Mat Phys & Struct Res, D-28334 Bremen, Germany
[3] Univ Magdeburg, Inst Phys Expt, D-39016 Magdeburg, Germany
[4] Univ Wurzburg, Inst Expt Phys 3, D-97074 Wurzburg, Germany
来源：
ACTA PHYSICA POLONICA A | 1998年 / 94卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The luminescence of InxGa1-xN is studied for thick epitaxial layers and quantum wells. Using spatially resolved cathodoluminescence spectroscopy the commonly observed broad integral photoluminescence spectra were found to result from spectral and lateral inhomogeneous emission across the samples. Moreover, the integral photoluminescence and absorption spectra show different temperature dependences. The effects can be explained assuming fluctuations of the composition associated with a variation of the band gap. PACS numbers: 68.35.Dv, 68.65.+g, 78.20.-e, 78.55.-m, 78.55.Cr.
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页码：260 / 264
页数：5
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