Influence of accidental impurities and defects on the low-frequency dielectric relaxation in the ferroelectric Cd2Nb2O7

被引：9

作者：

Kolpakova, NN ^{[1
]}

Wiesner, M

Lebedev, AO

Syrnikov, PP

Khramtsov, VA

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

[2] Adam Mickiewicz Univ, PL-61614 Poznan, Poland

来源：

TECHNICAL PHYSICS LETTERS | 1998年 / 24卷 / 09期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1262243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that accidental impurities and structural defects (cation vacancies) formed in the (CdO8)(n-) sublattice during synthesis enhance the relaxation properties of the system near T-Curie and suppress the ferroelectric phase transition. (C) 1998 American Institute of Physics.

引用

页码：679 / 682

页数：4

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