Improved Al/Si ohmic contacts to p-type 4H-SiC

被引：9
|
作者：
Kakanakov, R
Kassamakova, L
Kassamakov, I
Zekentes, K
Kuznetsov, N
机构：
[1] Bulgarian Acad Sci, Inst Appl Phys, Plovdiv 4000, Bulgaria
[2] Crystal Growth Res Ctr, St Petersburg, Russia
[3] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Microbiol Res Grp, Heraklion, Greece
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 80卷 / 1-3期
关键词：
ohmic contact; p-type SiC; thermal stability;
D O I：
10.1016/S0921-5107(00)00600-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An AlSi-based ohmic contact with a new composition is reported in this paper, AlSi(2%)Ti(0.15%) contacts are formed by evaporation on p-type 4H-SiC: grown by liquid phase epitaxy (LPE) and annealed in the temperature range from 700 to 950 degreesC. The ohmic behaviour has been checked by I-V characteristics and the contact resistivity has been measured by the linear transmission-line-model (TLM) method. Thr dependence of the contact resistivity on the annealing conditions has been studied. An ohmic behaviour has been established at 700 degreesC while the lowest contact resistivity value of 9.6 x 10(-5) Omega cm(2) has been obtained after annealing at 950 degreesC. The thermal stability of both Al/Si/SiC and AlSiTi/SiC contacts at a temperature of 600 degreesC has been studied, It has been found that the AlSiTi/SiC contacts ale stable for 100 h at this ageing temperature while the Al/Si/SiC contacts deteriorate after 24 h. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：374 / 377
页数：4
相关论文
共 50 条
  • [1] Al/Si ohmic contacts to p-type 4H-SiC for power devices
    Kassamakova, L
    Kakanakov, R
    Kassamakov, I
    Nordell, N
    Savage, S
    Svedberg, EB
    Madsen, LD
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1009 - 1012
  • [2] Si/Pt Ohmic contacts to p-type 4H-SiC
    Papanicolaou, NA
    Edwards, A
    Rao, MV
    Anderson, WT
    APPLIED PHYSICS LETTERS, 1998, 73 (14) : 2009 - 2011
  • [3] Si/Pt ohmic contacts to p-type 4H-SiC
    Appl Phys Lett, 14 (2009):
  • [4] Low temperature Ni/Si/Al ohmic contacts to p-type 4H-SiC
    Xu, Yang-Xi
    Sui, Jin-Chi
    Cao, Fei
    Li, Xing-Ji
    Yang, Jian-Qun
    Wang, Ying
    SOLID-STATE ELECTRONICS, 2021, 186
  • [5] Ti/Al/Au OHMIC CONTACTS TO p-TYPE 4H-SiC
    Han, Chao
    Zhang, Yuming
    Song, Qingwen
    Zhang, Yimen
    Tang, Xiaoyan
    Guo, Hui
    2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
  • [6] Ti/Al/Si Ohmic Contacts for Both n-Type and p-Type 4H-SiC
    Tamaso, Hideto
    Yamada, Shunsuke
    Kitabayashi, Hiroyuki
    Horii, Taku
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 669 - 672
  • [7] Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC
    Vivona, M.
    Greco, G.
    Lo Nigro, R.
    Bongiorno, C.
    Roccaforte, F.
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (03)
  • [8] Ternary TiAlGe ohmic contacts for p-type 4H-SiC
    Sakai, T.
    Nitta, K.
    Tsukimoto, S.
    Moriyama, M.
    Murakami, Masanori
    Journal of Applied Physics, 1600, 95 (04): : 2187 - 2189
  • [9] Ternary TiAlGe ohmic contacts for p-type 4H-SiC
    Sakai, T
    Nitta, K
    Tsukimoto, S
    Moriyama, M
    Murakami, M
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (04) : 2187 - 2189
  • [10] Ohmic contacts to p-type epitaxial and implanted 4H-SiC
    Crofton, J.
    Williams, J. R.
    Adedeji, A. V.
    Scofield, J. D.
    Dhar, S.
    Feldman, L. C.
    Bozack, M. J.
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 895 - 898
12345