Characterization of tetrahedrally bonded amorphous carbon via capacitance techniques

被引：0

作者：

Palinginis, KC ^{[1
]}

Ilie, A ^{[1
]}

Kleinsorge, B ^{[1
]}

Milne, WI ^{[1
]}

Cohen, JD ^{[1
]}

机构：

[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA

来源：

MATERIALS ISSUES IN VACUUM MICROELECTRONICS | 1998年 / 509卷

关键词：

D O I：

10.1557/PROC-509-119

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the results of junction capacitance measurements on thin tetrahedral amorphous carbon (ta-C) films to deduce their defect densities. We find defect densities in the range 3 - 7 x 10(17) cm(-3) in the undoped ta-C films, and roughly an order of magnitude larger in the nitrogen doped (n-type) films. In some cases fairly uniform defect profiles were obtained covering a thickness of a couple of hundreds angstroems. We also observed a thermal activation process of carriers from defect states at the ta-C/c-Si interface with an activation energy in the range of 0.4eV to 0.5eV.

引用

页码：119 / 124

页数：6

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