Experimental Studies Into the Beam Parameter Product of GaAs High-Power Diode Lasers

被引:13
作者
Crump, Paul [1 ]
Elattar, Mohamed [1 ]
Miah, Md Jarez [1 ]
Ekterai, Michael [1 ]
Karow, Matthias M. [1 ]
Martin, Dominik [1 ]
Maassdorf, Andre [1 ]
McDougall, Stewart [2 ]
Holly, Carlo [2 ]
Rauch, Simon [2 ]
Gruetzner, Stefan [2 ]
Strohmaier, Stephan [2 ]
Traenkle, Guenther [1 ]
机构
[1] Ferdinand Braun Inst gGmbH, Leibniz Inst Hochstfrequenztech, D-12489 Berlin, Germany
[2] TRUMPF Laser GmbH, D-78713 Schramberg, Germany
关键词
Distributed feedback devices; quantum well lasers; far field; near field; semiconductor device; thermal factors; high-power lasers; energy conversion; multimode waveguides; FILAMENTS;
D O I
10.1109/JSTQE.2021.3095660
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Experimental studies into the beam parameter product (BPP) of 940-980 nm GaAs-based high-power diode lasers are presented. Such lasers exhibit broadening far field and narrowing near field with increasing bias, with BPP increasing tenfold over the diffraction limit. First, spectrally-resolved beam profile measurements of lasers with monolithically-integrated gratings are presented, showing that a reproducible series of spatially-extended optical modes makes up the optical field. Then, changes to the device construction are presented, enabling effects limiting BPP to be inferred and addressed. Process- and package-induced effects can be minimized by design, while the effects of carrier, gain and temperature profiles dominate. Self-heating within the laser stripe raises the refractive index, forming a thermal lens, and the variation in curvature of this lens with bias and device construction directly affects BPP. Temperature non-uniformity along the resonator is also shown to strongly degrade BPP. Moreover, current spreading and the resulting lateral carrier accumulation (LCA) amplify high-order, high-BPP modes, thus degrading BPP for any given thermal lens. This LCA-induced degradation is shown to be suppressed by regrownlateral current-blocking structures. Finally, a flatter thermal lens and lower BPP can be achieved using thermal engineering, via changes to the epitaxial design or device layout.
引用
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页数:11
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