Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process

被引：13

作者：

Zamchiy, A. O. ^{[1
,2
]}

Baranov, E. A. ^{[1
]}

Maximovskiy, E. A. ^{[2
,3
]}

Volodin, V. A. ^{[2
,4
]}

Vdovin, V., I ^{[4
]}

Gutakovskii, A. K. ^{[2
,4
]}

Korolkov, I., V ^{[2
,3
]}

机构：

[1] Kutateladze Inst Thermophys SB RAS, Ac Lavrentiev Ave 1, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Pirogova Str 2, Novosibirsk 630090, Russia

[3] Nikolaev Inst Inorgan Chem SB RAS, Ac Lavrentiev Ave 3, Novosibirsk 630090, Russia

[4] Rzhanov Inst Semicond Phys SB RAS, Ac Lavrentiev Ave 13, Novosibirsk 630090, Russia

来源：

MATERIALS LETTERS | 2020年 / 261卷

基金：

俄罗斯科学基金会;

关键词：

Thin films; Phase transformation; Aluminum-induced crystallization; Inverted aluminum-induced layer exchange; Polycrystalline silicon; Silicon suboxide; INDUCED CRYSTALLIZATION; GROWTH;

D O I：

10.1016/j.matlet.2019.127086

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel fabrication method of polycrystalline silicon (poly-Si) films by aluminum-induced crystallization of amorphous silicon suboxide (a-SiO0.2) material via the inverted aluminum-induced layer exchange (ALILE) mechanism on glass substrates is presented. The presence of oxygen in the system prevented the formation of columnar crystalline Si precipitates (hillocks) in the bottom layer of the structure even at a process temperature of 550 degrees C. At the same time, this layer, consisting of Al, Si, and O atoms, contained nanocrystalline Si inclusions and a layer of initial a-SiOx with a thickness of about 60 nm, which was called the "a-SiOx residual layer". The poly-Si formed had a preferred (1 1 1) crystal orientation and an average crystallite size of 4.5 mu m. (C) 2019 Elsevier B.V. All rights reserved.

引用

页数：4

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