Epitaxial growth and characterisation of phosphorus doped SiC using TBP as precursor

被引：11

作者：

Henry, A ^{[1
]}

Janzén, E ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷

关键词：

phosphorus; CVD; photoluminescence;

D O I：

10.4028/www.scientific.net/MSF.483-485.101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The phosphorus incorporation into SiC epilayer is studied when varying the CVD process growth parameters and the results are compared with thermodynamical calculations. Photoluminescence spectra are also presented.

引用

页码：101 / 104

页数：4

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