Optical properties and deposition rate of sputtered Ta2O5 films deposited by ion-beam oxidation

被引：23
|
作者：
Lee, CC [1 ]
Jan, DJ
机构：
[1] Natl Cent Univ, Inst Opt Sci, Chungli 320, Taiwan
[2] Inst Nucl Energy Res, Plasma Technol Promot Ctr, Taoyuan 325, Taiwan
来源：
THIN SOLID FILMS | 2005年 / 483卷 / 1-2期
关键词：
ion bombardment; optical properties; tantalum;
D O I：
10.1016/j.tsf.2004.12.050
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Tantalum oxide films deposited by DC magnetron sputtering in the transition mode and ion-beam oxidation (1130) at room temperature showed that the deposition rate of the IBO film was four times higher than that obtained by conventional reactive magnetron sputtering, and was correlated with the oxygen ratio, X(O2)=O(2)/(O(2)+Ar), in the ion beam. The results of Rutherford backscattering and X-ray photoelectron spectroscopy indicated that the films deposited by IBO with various ion energy had the same composition and chemical bonding; the refractive index changed with the ion energy. The Fourier transform infrared absorption spectra indicated that the films deposited by IBO had excellent moisture-resistant characteristics. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：130 / 135
页数：6
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