Spin-dependent tunneling properties of Thue-Morse sequence in ferromagnet/semiconductor/ferromagnet cascade junctions

被引：3

作者：

Qin, Lilan ^{[1
,2
]}

Liu, De ^{[1
,2
]}

Zhang, Hongmei ^{[3
]}

Kong, Xiaojun ^{[1
,2
]}

机构：

[1] Hebei Normal Univ, Coll Phys & Informat Engn, Shijiazhuang 050016, Peoples R China

[2] Hebei Normal Univ, Hebei Adv Thin Films Lab, Shijiazhuang 050016, Peoples R China

[3] Hebei Univ Sci & Technol, Coll Sci, Shijiazhuang 050018, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 04期

基金：

中国国家自然科学基金;

关键词：

ROOM-TEMPERATURE;

D O I：

10.1063/1.3553580

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the spin-dependent transport in aperiodic cascade junctions of semiconductors, where semiconductors are arranged in the Thue-Morse sequence. We have calculated the spin-dependent transmission and the spin polarization with a transfer matrix method in these cascade junctions. It is shown that a spin-dependent bandgap structure appears by changing the generation and the Rashba spin-orbit wave vector. As a result, around resonant wave vectors, high spin polarization has been observed and the spin polarization has been reversed, and the spin conductance exists the value of zero by tuning the Rashba spin-orbit coupling. Our investigations may provide a way to design spin filters and spin switches. (c) 2011 American Institute of Physics. [doi:10.1063/1.3553580]

引用

页数：4

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