Effects of a lateral electric field on excitons in a single quantum dot

被引：3
作者：
Heller, W
Bockelmann, U
Abstreiter, G
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[2] Ecole Normale Super, Phys Mat Condensee Lab, F-75005 Paris, France
来源：
PHYSICA E | 1998年 / 2卷 / 1-4期
关键词：
quantum dot; electric field; Stark effect;
D O I：
10.1016/S1386-9477(98)00127-1
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigate single quantum dots formed by monolayer width fluctuations of a quantum well in a lateral external electric field. The ground state and several excited states are discussed. We find a red shift of the lines when the field is raised which is explained in terms of the Stark effect. The line width of the ground state broadens with increasing field due to lateral tunneling out of the dot. We observe a reduced Stark shift when the dot is populated by several excitons, (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：623 / 626
页数：4
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