Study of bake mechanisms by real-time in-situ ellipsometry

被引：29
|
作者：
Paniez, PJ [1 ]
Vareille, A [1 ]
Ballet, P [1 ]
Mortini, B [1 ]
机构：
[1] France Telecom, CNET Grenoble, F-38243 Meylan, France
来源：
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2 | 1998年 / 3333卷
关键词：
resist; polymer; bake; film formation; in-situ ellipsometry; relaxation; compaction;
D O I：
10.1117/12.312418
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Film formation and bake processes have been studied using in-situ ellipsometry. This new experimental set-up based on a HeNe laser mounted over a hot-plate is shown to be mainly sensitive to physical changes in the resist layer and provides real-time monitoring of the modifications induced during bake steps. Pure polymer films as well as DUV 248 nm and 193 nm CA resists are investigated.
引用
收藏
页码：289 / 300
页数：4
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