Excimer laser ablation of single crystal 4H-SiC and 6H-SiC wafers

A 248 nm, 23 ns pulsed excimer laser was used to compare the ablation characteristics of single crystal wafers of the polytypes 4H-SiC and 6H-SiC over a wide range of energy fluence (0.8-25 J cm(-2)). Photothermal models based on Beer-Lambert equation using thermal diffusivity and absorption coefficient, energy balance, and heat transfer were presented to predict the ablation mechanisms. Micromachining of trenches was demonstrated at 7 J cm(-2) to demonstrate the potential of UV laser ablation. Results indicate that the ablation process is characterized by two well-defined threshold fluences: (a) decomposition threshold similar to 1 J cm(-2) and (b) melting threshold similar to 1.5 J cm(-2) for both polytypes. Contrary to the modeling expectations, the ablation rates were lower and did not increase rapidly with energy fluence. Four types of ablation mechanisms-chemical decomposition, vaporization, explosive boiling, and plasma shielding-either singly or in combination occur as a function of energy fluence. The predictions of photothermal models were not in good agreement with the experimental data implying that a complex interplay among various physical phenomena occurs during ablation. Micromachined trench exhibited ripple patterns, microcracks and recast layers, most of which could be eliminated by a subsequent chemical cleaning process. It is concluded that excimer laser ablation is an effective but slow material removal process for SiC wafers compared to other lasers such as 1064 nm Nd:YAG.